Influence of He, Ne and Kr addition in reactive Ar/N-2 dc magnetron plasmaon TiN deposition

Citation
M. Braic et al., Influence of He, Ne and Kr addition in reactive Ar/N-2 dc magnetron plasmaon TiN deposition, VACUUM, 53(1-2), 1999, pp. 41-45
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042207X → ACNP
Volume
53
Issue
1-2
Year of publication
1999
Pages
41 - 45
Database
ISI
SICI code
0042-207X(199905)53:1-2<41:IOHNAK>2.0.ZU;2-E
Abstract
A reactive DC magnetron discharge produced in a TIN deposition system was i nvestigated using optical emission spectroscopy. The influence of He, Ne an d Kr addition into an Ar + N-2 working atmosphere was investigated. Additio n of small percentages of He or Ne in the working atmosphere of Ar + N-2, c aused a decrease of the N-2(+) (B)/N-2(C) ratio, whle with Kr addition the ratio increased. The known decrease of the relative intensity of Ti lines f or N-2 addition was also observed for He addition, while it increases when Ne and Kr are added. XRD analysis of TiN thin films revealed that He additi on determines the same effect as N-2. This behavior is explained by N and N + density increase for He addition. (C) 1999 Elsevier Science Ltd. All righ ts reserved.