High-temperature gradients at the solid-liquid interface during the growth
of W single crystals from the melt by electron beam floating-zone melting d
o not allow one to grow high-purity W single crystals free from small-angle
boundaries with misorientation angles less than 3-5 min of are and subgrai
n dislocation densities of less than 2 x 10(6) cm(-2). W single crystals wi
th a more perfect crystallographic structure can be obtained by strain anne
aling. In such single crystals there are no subboundaries and the dislocati
on density is about 8 x 10(4) cm(-2). (C) 1999 Elsevier Science Ltd. All ri
ghts reserved.