Plasma enhanced CVD silicon oxide films for integrated optic applications

Deposition and characterisation of amorphous plasma enhanced chemical vapou r deposited (PECVD) silicon oxide films suitable for integrated optics appl ications is reported. Film properties such as refractive index, density, gr owth rate, thickness, bonded hydrogen content and total stress are correlat ed to deposition parameters such as gas flow ratio and substrate temperatur e. The composition of the layers depends mainly on the reactant gas flow ra tio. For flow ratios greater than about 20, film properties were found to m atch the corresponding properties of silicon thermal oxide. (C) 1999 Elsevi er Science Ltd. All rights reserved.