Computer simulation of transition from h-BN TO c-BN during ion beam assisted deposition

A model is proposed of c-BN growth during the ion Beam assisted deposition procces. This phase appears when N and B atoms in h-BN create inserted ab-p lanes that increase the density of the material, resulting in transition fr om h-BN to c-BN. The aim is to simulate the processes that occur in growing BN films that lead to the phase transition. The ballistic processes caused by ion beam have been simulated by means of Monte Carlo computer codes TRI RS and DYTRIRS. With the help of computer code GEAR the annealing of the pr ofiles of bombarding particles (Ar, N, B) have been modelled. The sink stre ngths of dislocation loops and migration energies of Ar, B and N atoms in B N have been estimated. These loops can act as nuclei of inserted ab-planes consisted of B and N, leading to formation of c-BN. It is shown that, accor ding to our model, the transition from h-BN to c-BN is indeed possible, und er certain conditions. (C) 1999 Elsevier Science Ltd. All rights reserved.