DUAL IMPLANTATION OF SILICON WITH BORON AND AGRON IONS

Silicon wafers are implanted with 40 keV B+ ions (1.2 x 10(14) or 1.2 x 10(15) cm-2) and 50 or 100 keV Ar+ ions (from 1.2 x 10(14) to 1.2 x 10(15) cm-2). After implantation the samples are furnace annealed at t emperatures from 100 to 450-degrees-C. The depth profiles of the impla nted Ar atoms and radiation damages before and after annealing are obt ained from random and channeled RBS spectra. The influence of prelimin ary boron implantation on the distribution of radiation damages create d during subsequent argon implantation is studied. It is shown that th e annealing behaviour of implanted layers depends on the degree of sil icon amorphization.