The silicon 1s, 2p, and 2s, carbon 1s, and nitrogen 1s gas-phase core
excitation spectra are reported for two stable divalent silylenes, Si(
NRCH=CHNR) and Si(NRCH2CH2NR) (R = Bu-t), and for the two analogous te
travalent dihydridosilane molecules, H2Si(NRCH=CHNR) and H2Si(NRCH2CH2
NR) (R = Bu-t). The nature of the excited states arising from one-elec
tron core --> pi and core --> sigma* excitations at different sites o
n the silylene ring are examined by relating the changes in the spectr
a of these compounds to differences in their molecular structure. The
variations in the intensities of core --> pi transitions in these spe
ctra probe the extent of delocalization in the pi-electron manifold an
d, thus, allow us to investigate the nature of pi stabilization in het
erocycles containing divalent silicon. Low-lying transitions to a pi(
Si-N) level observed in all core edge spectra strongly support the exi
stence of pi-delocalization in the C=C unsaturated silylene. Ab initio
calculations are used to confirm spectral, assignments.