PHOTOELECTRIC PROPERTIES OF UNDOPED AND LITHIUM-DOPED ZN1-XMGXTE ALLOYS

Authors
MANSOUR BA DEMIAN SE SHABAN H ELAKKAD F
Citation
Ba. Mansour et al., PHOTOELECTRIC PROPERTIES OF UNDOPED AND LITHIUM-DOPED ZN1-XMGXTE ALLOYS, Journal of materials science. Materials in electronics, 5(1), 1994, pp. 38-40
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
5
Issue
1
Year of publication
1994
Pages
38 - 40
Database
ISI
SICI code
0957-4522(1994)5:1<38:PPOUAL>2.0.ZU;2-J
Abstract
The room temperature photoelectric response of undoped and lithium-dop ed Zn1-xMgxTe (0 less-than-or-equal-to x less-than-or-equal-to 0.50) a lloys has been measured in the wavelength range 0.50 less-than-or-equa l-to lambda less-than-or-equal-to 3.0 mum. The response curve for undo ped samples is characterized by a single peak in the band edge region. The peak shifts with composition in accordance with the expected shif t in the energy band gap. Lithium-doped samples show an additional pea k centred at 1.04 eV for all compositions. This peak is attributed to photo-generated holes in the split-off band created as the result of e lectronic transitions to shallow acceptor impurities.