Ba. Mansour et al., PHOTOELECTRIC PROPERTIES OF UNDOPED AND LITHIUM-DOPED ZN1-XMGXTE ALLOYS, Journal of materials science. Materials in electronics, 5(1), 1994, pp. 38-40
The room temperature photoelectric response of undoped and lithium-dop
ed Zn1-xMgxTe (0 less-than-or-equal-to x less-than-or-equal-to 0.50) a
lloys has been measured in the wavelength range 0.50 less-than-or-equa
l-to lambda less-than-or-equal-to 3.0 mum. The response curve for undo
ped samples is characterized by a single peak in the band edge region.
The peak shifts with composition in accordance with the expected shif
t in the energy band gap. Lithium-doped samples show an additional pea
k centred at 1.04 eV for all compositions. This peak is attributed to
photo-generated holes in the split-off band created as the result of e
lectronic transitions to shallow acceptor impurities.