TRAP DISTRIBUTION AND DENSITY IN ULTRAHIGH-VACUUM-DEPOSITED TELLURIUM-FILMS

Authors
RAY AK SWAN R HOGARTH CA
Citation
Ak. Ray et al., TRAP DISTRIBUTION AND DENSITY IN ULTRAHIGH-VACUUM-DEPOSITED TELLURIUM-FILMS, Journal of materials science. Materials in electronics, 5(1), 1994, pp. 59-61
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
5
Issue
1
Year of publication
1994
Pages
59 - 61
Database
ISI
SICI code
0957-4522(1994)5:1<59:TDADIU>2.0.ZU;2-0
Abstract
At high fields corresponding to the bias voltage V > 1 V, space-charge -limited conduction is believed to be a dominant mechanism in 50 nm th ick ultrahigh-vacuum- (UHV) deposited polycrystalline tellurium films in a sandwich configuration between two indium electrodes. From Arrhen ius plots, it was found that discrete traps were located at 0.007 eV a bove the valence band of the film.