PHASE-TRANSITION IN HEAVILY-DOPED GALLIUM-ARSENIDE

Authors
PRUDNIKOV VV PRUDNIKOVA IA SEMIKOLENOVA NA
Citation
Vv. Prudnikov et al., PHASE-TRANSITION IN HEAVILY-DOPED GALLIUM-ARSENIDE, Physica status solidi. b, Basic research, 181(1), 1994, pp. 87-96
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
181
Issue
1
Year of publication
1994
Pages
87 - 96
Database
ISI
SICI code
0370-1972(1994)181:1<87:PIHG>2.0.ZU;2-S
Abstract
The results of investigation of GaAs single crystals heavily doped by group VI elements are considered. The doping effects are studied by me thods of free carrier infrared absorption, photoluminescence, ultrason ic, and calorimetric methods. For the explanation of the observed pecu liarities in doped gallium arsenide the thermodynamic model of phase t ransitions is proposed using the properties of complex formation in th is semiconducting compound.