HYDROSTATIC-PRESSURE EFFECT ON POINT-DEFECT ELECTRONIC STATES IN NARROW-GAP AND GAPLESS SEMICONDUCTORS

A study is made of the influence of hydrostatic pressure on point defe ct states in narrow-gap and gapless semiconductors, described by the t hree-band Kane model. It is shown that shifts of energy levels of cent res of different symmetry with pressure are different. The h-centre le vel follows strictly the v-band top. On the contrary, the 1-c level sh ift depends on pressure in a more complicated way, and is determined b y system parameters. The transition from resonance to localized defect states due to the transition from gapless to narrow-gap semiconductor s caused by hydrostatic pressure is also studied.