RECONSTRUCTION DEPENDENT ADSORPTION OF C-60 ON GAAS(111)B

Citation
P. Moriarty et al., RECONSTRUCTION DEPENDENT ADSORPTION OF C-60 ON GAAS(111)B, Surface science, 405(1), 1998, pp. 21-26
Citations number
20
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
405
Issue
1
Year of publication
1998
Pages
21 - 26
Database
ISI
SICI code
0039-6028(1998)405:1<21:RDAOCO>2.0.ZU;2-2
Abstract
The interaction of C-60 with the (2 x 2) and (1 x 1)(LT) reconstructio ns of the GaAs(111)B surface has been studied using synchrotron radiat ion core-level and valence band photoemission. For the (2 x 2) phase. C-60 adsorption produces no change in either the lineshape or the ener gy position of the Ga 3d and As 3d core-levels. In contrast, the As 3d photoelectron spectrum of the (1 x 1)(LT) surface is considerably alt ered following the deposition of C-60. Our results indicate that the c haracter of C-60 adsorption may be changed from physisorption to chemi sorption via variations in surface reconstruction and stoichiometry. ( C) 1998 Elsevier Science B.V. All rights reserved.