STUDY OF IN2S3 THIN-FILMS BY DIFFRACTION OF SYNCHROTRON-RADIATION

The crystal structure of In2S3 thin films obtained by the chemical vap or deposition method from the volatile complex compounds indium(III) i sopropyl xanthate and indium(III) diethyl dithiocarbonate was studied by synchrotron radiation diffraction. High photon beam intensity (3 x 10(10) photons/mm(2) . s) and the high angular resolution (0.02 degree s) of the reflexes made it possible to study weak reflexes to analyze the phase composition of samples in more detail, to determine the size of the particles (the size of coherency), and to evaluate the stress at the microscopic level. It is shown that for indium sulfide films de posited at T=230 degrees C, the structure is cubic (alpha-In2S3). For deposition temperatures T=250 degrees C and higher, the structure is t etragonal (beta-In2S3). During annealing an alpha-beta phase transitio n was observed at T=400-420 degrees C. For samples deposited at 430 de grees C, a splitting of the (5,0,15) reflex was observed, which can be assigned to monoclinic or hexagonal distortions of the lattice. (C) 1 998 Academic Press.