NONLITHOGRAPHIC NANOWIRE-ARRAY TUNNEL DEVICE - FABRICATION, ZERO-BIASANOMALIES, AND COULOMB-BLOCKADE

Coulomb blockade (CB) was observed in Al/aluminum oxide/Ni nanowire si ngle-junction arrays fabricated by electrochemical deposition of Ni in to porous aluminum oxide nanotemplates. The bias dependence of the tun neling current and the temperature dependence of the zero-bias anomali es observed in the tunneling spectra are shown to accord well with the theory of Nazarov for CB in systems where the leads play a significan t role. Direct scanning tunneling microscopy measurements of the nanow ire leads resistance confirms it to be the regime required by the theo ry.