MICRON THICK EPITAXIAL (100)AG FILM GROWTH ON MGO

Epitaxial films of (100) Ag were deposited onto (100) MgO substrates t o a thickness of 4 mu m with no evidence of (Ill)nucleation. Deposited films were smooth and had large areas, 50 X 50 microns square, free o f morphological defects. Films were deposited using a two-step process . First, pulsed laser deposition was used to grow a 1000 Angstrom AE ( 100) seed layer on the MgO substrate. Second, e-beam evaporation was u sed to grow the film to the desired thickness. The high quality of the resulting films will allow them to be used as templates for further e pitaxial deposition of other applied materials.