EPITAXIAL-GROWTH OF SRTIO3 (00H), (0HH), AND (HHH) THIN-FILMS ON BUFFERED SI(001)

Epitaxial SrTiO3(STO) thin films have been grown successfully on Si(00 1) buffered with single and double buffer layers by pulsed laser depos ition. Depending on the buffer structure and under appropriate substra te temperature and oxygen pressure values? epitaxial films are grown w ith single orientations. Epitaxial STO films with (Ohh), (00h), and (h hh) out-of-plane orientation have been obtained for the first time on yttria-stabilized zirconia (YSZ)/Si(001), CeO2/YSZ/Si(001), and TiN/YS Z/Si(001), respectively. Secondary ion mass spectrometry analyses show sharp interfaces and good uniformity of the elements in each layer. T he films are practically free of droplets, and the rms value of roughn ess is smaller than 0.5 nm.