STUDY OF ELECTRICAL CHARACTERISTICS OF HG CDTE PN JUNCTION FORMED BY LOW-ENERGY ION-BEAM MILLING

Authors
LU HQ ZHAO J LI XY ZHOU YD FANG JX
Citation
Hq. Lu et al., STUDY OF ELECTRICAL CHARACTERISTICS OF HG CDTE PN JUNCTION FORMED BY LOW-ENERGY ION-BEAM MILLING, JOURNAL OF INFRARED AND MILLIMETER WAVES, 17(1), 1998, pp. 21-24
Citations number
4
Categorie Soggetti
Optics
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES → ACNP
ISSN journal
10019014
Volume
17
Issue
1
Year of publication
1998
Pages
21 - 24
Database
ISI
SICI code
1001-9014(1998)17:1<21:SOECOH>2.0.ZU;2-T
Abstract
PN junctions were formed on HgCdTe bulk material with cutoff wavelengt h of 3 similar to 5 mu m and 8 similar to 10 mu m,respectively. Their I-V and C-V characteristics were studied and it was found that these j unctions are of the type of diffusion junctions, which is coincident w ith the current hypothesis that the main mechanism of surface conversi on on p type HgCdTe by ion beam milling is due to mercury diffusion.