THE ACCEPTOR PROPERTIES OF UN-INTENTIONAL LY DOPED P-TYPE MBE-GROWN HG1-XCDXTE

Authors
FANG WZ YANG JR CHEN XQ WANG SL HE L
Citation
Wz. Fang et al., THE ACCEPTOR PROPERTIES OF UN-INTENTIONAL LY DOPED P-TYPE MBE-GROWN HG1-XCDXTE, JOURNAL OF INFRARED AND MILLIMETER WAVES, 17(1), 1998, pp. 25-30
Citations number
23
Categorie Soggetti
Optics
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES → ACNP
ISSN journal
10019014
Volume
17
Issue
1
Year of publication
1998
Pages
25 - 30
Database
ISI
SICI code
1001-9014(1998)17:1<25:TAPOUL>2.0.ZU;2-1
Abstract
Characteristics of un-intentionaly doped p-type MBE-grown Hg1-xCdxTe(x approximate to 0.24) materials after annealed at 250 degrees C were e xplored, The acceptor and residual donor concentrations of the materia ls were determined by studying Hall parameters at different temperatur es. The acceptor concentration, residual donor concentration and the a cceptor energy are 2 similar to 3X10(16)cm(-3),5X10(15)cm(-3) and 15 s imilar to 18meV, respectively. The results show that MBE technique can be used to obtain lowly compensated p-type HgCdTe materials.