THE INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS

Authors
DEMICHELIS F CROVINI G PIRRI CF TRESSO E GALLONI R RIZZOLI R SUMMONTE C ZIGNANI F RAVA P MADAN A
Citation
F. Demichelis et al., THE INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 377-386
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties → ACNP
ISSN journal
09586644
Volume
69
Issue
2
Year of publication
1994
Pages
377 - 386
Database
ISI
SICI code
0958-6644(1994)69:2<377:TIOHDO>2.0.ZU;2-R
Abstract
Amorphous silicon carbide films were deposited by the plasma-enhanced chemical vapour deposition technique in SiH4-CH4-H-2 gas mixtures and the effect of hydrogen dilution on the optoelectronic properties inves tigated using photothermal deflection spectroscopy, photoconductivity and dark electrical conductivity, photoluminescence and Fourier transf orm infrared spectroscopy. Large H-2 dilution leads to materials of im proved quality whose E(g) is about 2.0 eV. The materials were also inc orporated into a solar cell device structure to confirm our conclusion s.