FORMATION OF ZR-DISILICIDE BY HIGH-CURRENT ZR ION-IMPLANTATION INTO SI USING METAL VAPOR VACUUM-ARC ION-SOURCE

High-current Zr ion implantation technique was employed to synthesize Zr-silicide layers on Si wafers, using a metal vapor vacuum are (MEVVA ) ion source. The implantation was conducted under an extracted voltag e of 45 kV, with various ion beam current densities from 25 to 127 mu A/cm(2) and to ion doses ranging from 8 x 10(16) to 5 x 10(17) ions/cm (2) It was found that implantation with a current density of 76 mu A/c m(2) to a dose of 5 x 10(17) ions/cm(2) could directly synthesize an e quilibrium C49-ZrSi2 layer on Si surface with neither external heating nor post-annealing and that the sheet resistance of the silicide laye r so obtained was of 19 Omega/square, implying the layer was of good q uality. The formation mechanism of the ZrSi2 phase was discussed in te rms of the temperature rise and irradiation parameters in the process of implantation. (C) 1998 Elsevier Science B.V.