SIMULATION OF PHOSPHORUS IMPLANTATION INTO SILICON WITH A SINGLE-PARAMETER ELECTRONIC STOPPING POWER MODEL

We simulate dopant profiles for phosphorus implantation into silicon u sing a new model for electronic stopping power. In this model, the ele ctronic stopping power is factorized into a globally averaged effectiv e charge Z(1) and a local charge density dependent electronic stoppin g power for a proton. There is only a single adjustable parameter in t he model, namely the one electron radius r(s)(0) which controls Z(1) By fine tuning this parameter, we obtain excellent agreement between s imulated dopant profiles and the SIMS data over a wide range of energi es for the channeling case. Our work provides a further example of imp lant species, in addition to boron and arsenic, to verify the validity of the electronic stopping power model and to illustrate its generali ty for studies of physical processes involving electronic stopping.