REALIZATION OF VERTICALLY STACKED INGAAS GAAS QUANTUM WIRES ON V-GROOVES WITH (322) FACET SIDEWALLS BY CHEMICAL BEAM EPITAXY/

We report, for the first time, the fabrication of vertically stacked I nGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical be am epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with ( 100)-(322) facet configuration instead of (100)-(111) base at 450 degr ees C. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom . Transmission electron microscopy verifies that the vertically stacke d InGaAs QWRs were formed in sizes of about 200 Angstrom x 500 similar to 600 Angstrom. Three distinct photoluminescence peaks related with side-quantum welts (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results st rongly suggest;the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.