PHOTOLUMINESCENCE AND RAMAN-SCATTERING SP ECTROSCOPIES OF MBE-GROWN HG0.68CD0.32TE EPILAYER

Using photoluminescence (PL) and Raman scattering (RS), the MBE-grown Hg1-xCdxTe (x = 0.325) epilayers were studied. The PL measurement show s a strong near-band emission peak with a FWHM of 5me V, which indicat es high crystal quality obtained. Three peaks, the relatively strong H gTe-like TO mode at 119cm(-1) and HgTe-like LO at (139)cm(-1) and a we ak LA mode at 93cm(-1), were observed on RS spectra. The weak peak at 93cm(-1) has not been reported previously. The assignment of the peak is based on the comparison with the result of far-infrared transmittan ce spectra(FIT).