ELECTRICAL-PROPERTIES OF ZIRCONIUM DISELENIDE SINGLE-CRYSTALS GROWN BY IODINE TRANSPORT METHOD

Citation
Sg. Patel et al., ELECTRICAL-PROPERTIES OF ZIRCONIUM DISELENIDE SINGLE-CRYSTALS GROWN BY IODINE TRANSPORT METHOD, Bulletin of Materials Science, 21(3), 1998, pp. 213-217
Citations number
14
Categorie Soggetti
Material Science
ISSN journal
02504707
Volume
21
Issue
3
Year of publication
1998
Pages
213 - 217
Database
ISI
SICI code
0250-4707(1998)21:3<213:EOZDSG>2.0.ZU;2-9
Abstract
Single crystals of zirconium diselenide (ZrSe2) were grown by chemical vapour transport method using iodine as the transporting agent. The c rystals were found to exhibit metallic behaviour in the temperature ra nge 77-300 K and semiconducting nature in 300-443 K range. The measure ments of thermoelectric power and conductivity enabled the determinati on of both carrier mobility and carrier concentration. The variation o f carrier mobility and carrier concentration with temperature indicate s the presence of deep trapping centres and their reduction with tempe rature in these crystals.