CHARGE-CARRIER TRANSPORT IN N-I-P AND P-I-N A-SI C-SI HETEROJUNCTION SOLAR-CELLS/

The regional approximation method, developed recently for the analysis of a p-i-n a-Si/c-Si heterojunction solar cell structure, is applied to simulate the internal operation and external characteristics of a n -i-p a-Si/c-Si cell. The derived closed-form solutions have equal basi c forms. However, in as much as material parameter values in these two structures differ. also the calculated plots of output characteristic s of p-i-n and n-i-p a-Si/c-Si cells are different. The dominant effec ts which influence the charge-carrier transport in both cells are mutu ally compared and discussed. (C) 1998 Elsevier Science B.V. All rights reserved.