MODELING AND SIMULATION OF A SILICON BEAM RESONATOR ATTACHED TO A SQUARE DIAPHRAGM

Citation
Sc. Fan et al., MODELING AND SIMULATION OF A SILICON BEAM RESONATOR ATTACHED TO A SQUARE DIAPHRAGM, KSME INTERNATIONAL JOURNAL, 12(3), 1998, pp. 339-346
Citations number
7
Categorie Soggetti
Engineering, Mechanical
Journal title
KSME INTERNATIONAL JOURNAL
ISSN journal
12264865 → ACNP
Volume
12
Issue
3
Year of publication
1998
Pages
339 - 346
Database
ISI
SICI code
1011-8861(1998)12:3<339:MASOAS>2.0.ZU;2-6
Abstract
Based on the Finite Element Method (FEM) model of a practical silicon beam resonator attached to a square diaphragm used for measuring press ure, this paper presents two location error models which exist in actu al fabrication. We calculate, analyze and investigate the relationship between the basic natural frequency of the beam resonator and the mea sured pressure for two error models by making use of FEM. In order to improve the exchangeability of the sensor, it is necessary to monitor the processing accuracy in x-and y-axes, and the reference angle relat ive to the ideal location within the positive stress range. It is also necessary to monitor the processing accuracy in the x-axis within the negative stress range, as the beam axial direction is along the x-asi s the square diaphragm.