SIZE-SELECTED NANOCRYSTALS OF III-V SEMICONDUCTOR-MATERIALS BY THE AEROTAXY METHOD

Citation
K. Deppert et al., SIZE-SELECTED NANOCRYSTALS OF III-V SEMICONDUCTOR-MATERIALS BY THE AEROTAXY METHOD, Journal of aerosol science, 29(5-6), 1998, pp. 737-748
Citations number
24
Categorie Soggetti
Environmental Sciences","Engineering, Chemical","Metereology & Atmospheric Sciences","Engineering, Mechanical
Journal title
ISSN journal
00218502
Volume
29
Issue
5-6
Year of publication
1998
Pages
737 - 748
Database
ISI
SICI code
0021-8502(1998)29:5-6<737:SNOISB>2.0.ZU;2-J
Abstract
In this paper we present a fabrication route to produce size-selected III-V semiconductor nanocrystals via a simple, reliable, and efficient aerosol route. Since this approach includes the reaction of aerosol p articles and a self-organized growth of a new compound, all in the aer osol phase, we call this process aerotaxy. Size-selected nanocrystals of different m-V compounds in a diameter range below 20 nm were fabric ated using this method. Through the reaction of arsine with gallium dr oplets or of phosphine with indium droplets, GaAs and InP clusters wer e formed. Our approach opens the possibility to produce contamination- free and size-selected nanocrystals of compound semiconductor material s with considerable freedom in composition and size. (C) 1998 Elsevier Science Ltd. All rights reserved.