INTERFACE CONTRIBUTIONS TO LOCALIZED HEATING OF DIELECTRIC THIN-FILMS

Citation
Jc. Lambropoulos et Ss. Hwang, INTERFACE CONTRIBUTIONS TO LOCALIZED HEATING OF DIELECTRIC THIN-FILMS, The Journal of adhesion, 67(1-4), 1998, pp. 37-68
Citations number
68
Categorie Soggetti
Engineering, Chemical","Material Science",Mechanics
Journal title
ISSN journal
00218464
Volume
67
Issue
1-4
Year of publication
1998
Pages
37 - 68
Database
ISI
SICI code
0021-8464(1998)67:1-4<37:ICTLHO>2.0.ZU;2-C
Abstract
Measurements of the thermal conductivity of thin dielectric films in t he last ten years have established that thin him thermal conductivity may be much lower than that of the corresponding bulk solid, by as muc h as two orders of magnitude, and that significant interfacial thermal resistance may be present along the film/substrate interface. We revi ew such measurements of thin film thermal conductivity and interfacial thermal resistance, and use the heat conduction equation to determine their implications for the localized heating of thermally anisotropic thin films bonded to substrates. It is found that for surface heating an equivalent isotropic film can be established and that the presence of large interfacial thermal resistance leads to a strong dependence of film thermal conductivity on film thickness, especially for thin fi lms. A microscopic model of the film/substrate interface is used to es tablish the dependence of the interfacial thermal resistance on porosi ty along the interface.