EXPERIENCES ON CONTRASTING MICROSTRUCTURE USING ORIENTATION IMAGING MICROSCOPY

Orientation Imaging Microscopy TM is one of the common terms for the a nalysis of three-dimensional intensity distribution of backscattered e lectrons in the Scanning Electron Microscope. This three-dimensional i ntensity distribution (Kikuchi-Pattern) is determined by the crystal l attice and its orientation in the irradiated region of the sample. Dur ing the scanning of the sample by the electron beam every step of scan gives information about the crystal lattice and its orientation. Anal ogous to Polarization Light Microscopy a contrast within the polished sample surface can be obtained as all adjacent scanning points of unif orm orientation belong to the same grain. Local changes of orientation suggest the identification of a grain boundary.