LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS

Authors
STROH RJ PLAIS F KRETZ T LEGAGNEUX P HUET O MAGIS M PRIBAT D JIANG N HUGON MC AGIUS B
Citation
Rj. Stroh et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 9-13
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEE proceedings. Part G. Circuits, devices and systems → ACNP
ISSN journal
09563768
Volume
141
Issue
1
Year of publication
1994
Pages
9 - 13
Database
ISI
SICI code
0956-3768(1994)141:1<9:L(PT>2.0.ZU;2-8
Abstract
Polycrystalline silicon is a promising candidate for the fabrication o f thin-film transistors used to control the pixel voltage of active-ma trix liquid-crystal displays. Results are presented on the ultra-high vacuum chemical vapour deposition of silicon thin films and on the gat e-oxide deposition at low temperature by distributed electron-cyclotro n-resonance-plasma-enhanced chemical vapour deposition. It is shown th at high electron mobilities and low off currents characterise the tran sistors fabricated with these techniques.