OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF POLYSILICON PRODUCED BY EXCIMER-LASER AND FURNACE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON (A-SI-H)

The authors report on the optoelectronic and structural properties of polysilicon produced by excimer (ArF) laser crystallisation of undoped hydrogenated amorphous silicon (a-Si:H). Micro-structure and average grain size are determined by TEM and electron diffraction. A maximum a real grain size of 0.2 mum2 is observed in excimer (ArF) laser crystal lised polysilicon, grain size is also demonstrated to be dependent on the a-Si:H precursor deposition temperature. UV reflectivity and FTIR spectroscopy are employed to investigate the degree of crystallinity a nd atomic bonding configurations. DC conductivity measurements are use d to infer information on transport properties. These data are compare d with studies of low-temperature (600-degrees-C) furnace crystallised polysilicon.