HOT-HOLE-INDUCED DEGRADATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - EXPERIMENTAL AND THEORETICAL-ANALYSIS

Authors
PECORA A TALLARIDA G FORTUNATO G MARIUCCI L REITA C MIGLIORATO P
Citation
A. Pecora et al., HOT-HOLE-INDUCED DEGRADATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - EXPERIMENTAL AND THEORETICAL-ANALYSIS, IEE proceedings. Part G. Circuits, devices and systems, 141(1), 1994, pp. 33-37
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEE proceedings. Part G. Circuits, devices and systems → ACNP
ISSN journal
09563768
Volume
141
Issue
1
Year of publication
1994
Pages
33 - 37
Database
ISI
SICI code
0956-3768(1994)141:1<33:HDIPST>2.0.ZU;2-1
Abstract
The application of bias stress with high source-drain voltage and diff erent gate voltages in polycrystalline silicon thin-film transistors p roduces marked modifications both in the off current as well as device transconductance. These effects are explained in terms of hot-carrier effects related to a combination of charge injection into the gate in sulator and formation of interface states near the drain.