D. Kolman et al., INFLUENCE OF DEPOSITION PARAMETERS ON DIAMOND THERMAL PLASMA CHEMICAL-VAPOR-DEPOSITION WITH LIQUID FEEDSTOCK INJECTION, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 794-801
A global three-dimensional two-phase model for thermal plasma chemical
vapor deposition with liquid feedstock injection developed in our gro
up [1,2] has been used for a simulation of diamond production from ace
tone, ethanol and methane in argon-hydrogen plasmas. In this study, th
e influence of precursor type, gas and liquid flow rates, atomizing pr
obe location and characteristics, and catalytic reactor chamber is dis
cussed. The main finding is that deposition utilizing liquid precursor
s offers a distinct new deposition mechanism-liquid droplet penetratio
n of the substrate boundary layer followed by a rapid droplet evaporat
ion and a local increase in the surface deposition rates. Although the
overall deposition rate does not exceed that of gasphase precursors,
it is believed that further optimization mill lead to a deposition rat
e increase. (C) 1998 Elsevier Science S.A.