ON THE PROPERTIES OF IMPURITY BANDS GENERATED IN P-TYPE HOMOEPITAXIALDIAMOND

Authors
INUSHIMA T OGASAWARA A SHIRAISHI T OHYA S KARASAWA S SHIOMI H
Citation
T. Inushima et al., ON THE PROPERTIES OF IMPURITY BANDS GENERATED IN P-TYPE HOMOEPITAXIALDIAMOND, DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 874-878
Citations number
21
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
7
Issue
6
Year of publication
1998
Pages
874 - 878
Database
ISI
SICI code
0925-9635(1998)7:6<874:OTPOIB>2.0.ZU;2-K
Abstract
Electrical and optical investigations performed on boron-doped homoepi taxial diamonds reveal the presence of an impurity band when the carri er concentration is higher than 5 x 10(17) cm(-3) at room temperatures . This band is mainly composed of an excited stale of the impurity bor on (0.35 eV) and its optical phonon-sideband that is located at 0.51 e V. This impurity band explains the increases of Hall coefficient and H all mobility when the temperature increases, and makes the diamond col oration blue. (C) 1998 Elsevier Science S.A.