Citation
Kw. Kobayashi et al., INP-BASED HBT TECHNOLOGY FOR NEXT-GENERATION LIGHTWAVE COMMUNICATIONS, Microwave journal, 41(6), 1998, pp. 22
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic",Telecommunications
Journal title
Microwave journal
ISSN journal
01926225
→ ACNP
Volume
41
Issue
6
Year of publication
1998
Database
ISI
SICI code
0192-6225(1998)41:6<22:IHTFNL>2.0.ZU;2-S
Abstract
In/AlAs/InGaAs-InP heterojunction dipolar transistor (HBT) technology
offers high device speed, low 1/f flicker noise and monolithic integra
tion of 1.55 mu m InGaAs photodetectors making them well suited for ne
xt-generation, high data rte optoelectronic communication links. Appli
cation toward next-generation >40 Gbps communication systems is discus
sed, and sate-of-the-art receiver capability is presented.