HIGH-FIELD DIFFUSIVITY AND NOISE SPECTRA IN GAAS-MESFETS

The paper investigates the impact of the high-field electron diffusivi ty model in GaAs on the simulated noise performances of metal semicond uctor field-effect transistors (MESFETs). On the basis of a comparison between the numerical simulation, carried out through a two-dimension al implementation of the impedance-field method, and the noise power a nd correlation spectra measured on a 0.6 mum low-noise MESFETs, it is shown that the intermediate- and high-field behaviour of the diffusivi ty-field curve consistent with the experimental data is close to the o ne suggested in the study [10], while other experimental or Monte Carl o data overestimate the diffusivity and therefore the noise.