DIFFERENTIAL SHEET RESISTIVITY OF MIXED IMPLANTED (PHOSPHORUS PLUS BORON) SILICON

This work highlights the effect of ion dose on sheet resistance of mix ed implanted silicon using phosphorus and boron ions. The dose of phos phorus ions was kept fixed at 1 x 10(14) ions/cm(2) whereas dose of bo ron ions was varied from 1 x 10(12) to 1 x 10(14) ions/cm(2). The resu lts indicate that the sheet resistance is significantly affected by va riation in boron ions dose. Carrier concentration profiles for these m ixed implanted samples have also been plotted, by calculating differen tial sheet resistivity as a function of depth. (C) 1998 Published by E lsevier Science Ltd. All rights reserved.