ACOUSTIC-PHONON EMISSION BY HOT 2D ELECTRONS - THE ANGULAR-DISTRIBUTION OF THE EMITTED PHONON POWER

Authors
Citation
C. Jasiukiewicz, ACOUSTIC-PHONON EMISSION BY HOT 2D ELECTRONS - THE ANGULAR-DISTRIBUTION OF THE EMITTED PHONON POWER, Semiconductor science and technology, 13(6), 1998, pp. 537-547
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
6
Year of publication
1998
Pages
537 - 547
Database
ISI
SICI code
0268-1242(1998)13:6<537:AEBH2E>2.0.ZU;2-H
Abstract
Calculations of energy relaxation rate P of quasi-two-dimensional Ferm i electron gases formed in GaAs heterostructures have been performed. Detailed analysis of the emitted phonon power angular distribution in both reciprocal space and the substrate has been made. The numerical c alculations have been performed for 2D electron gases in the (001) pla ne. The strong dependence of the angular distribution on temperature a nd the 2D electron gas (2DEG) thickness parameter has been analysed. T he angular dependence of the emitted phonon frequency spectrum has bee n considered. The importance of screening and the phonon focusing has been discussed. The domination of the transverse phonon contribution h as been shown.