A MODEL FOR HOT-ELECTRON LIGHT-EMISSION FROM SEMICONDUCTOR HETEROSTRUCTURES

Hot electron light emission has been observed under longitudinal trans port conditions in semiconductor heterostructures where an undoped qua ntum well has been placed on the n-side of the depletion layer of a p- n-junction. We have developed a model for hole generation, leading to electron-hole recombination in the well, which explains the sharp rise of the electroluminescence with increasing electric field, It is base d on impact ionization of compensating acceptor-like impurities in the depletion region of the diode. The model is used to predict the varia tion of emitted light intensity with electron temperature (applied ele ctric field) and structural parameters such as the n- and p-doping and the concentration of the compensating impurities.