PARAMETERS OF DEFECT STATES IN PB1-XSNXSE (X-LESS-THAN-OR-EQUAL-TO-0.03) ALLOYS IRRADIATED WITH ELECTRONS

Citation
Ep. Skipetrov et al., PARAMETERS OF DEFECT STATES IN PB1-XSNXSE (X-LESS-THAN-OR-EQUAL-TO-0.03) ALLOYS IRRADIATED WITH ELECTRONS, Semiconductor science and technology, 13(6), 1998, pp. 557-562
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
6
Year of publication
1998
Pages
557 - 562
Database
ISI
SICI code
0268-1242(1998)13:6<557:PODSIP>2.0.ZU;2-U
Abstract
This paper is devoted to the investigation of galvanomagnetic effects (B less than or equal to 7 T) in electron-irradiated (T = 300 K, E = 6 MeV, Phi less than or equal to 5.7 x 10(17) cm(-2)) n- and p-Pb1-xSnx Se (x less than or equal to 0.03) alloys in the vicinity of the insula tor-metal transition induced by pressure (P less than or equal to 18 k bar). In the frame of the two-band model, the dependence of the Hall c onstant on the magnetic field was calculated and found to be in a good agreement with experimental data. The main parameters of charge carri ers in irradiated alloys were determined. It was shown that in the met al phase the hole concentration increases under pressure due to the mo tion of the energy bands at the Brillouin zone L-point and the flow of electrons from the valence band to the radiation defect band E-t1. By comparing theoretical and experimental dependences of hole concentrat ion on pressure the parameters of the irradiation-induced defect band E-t1 were determined.