Ep. Skipetrov et al., PARAMETERS OF DEFECT STATES IN PB1-XSNXSE (X-LESS-THAN-OR-EQUAL-TO-0.03) ALLOYS IRRADIATED WITH ELECTRONS, Semiconductor science and technology, 13(6), 1998, pp. 557-562
This paper is devoted to the investigation of galvanomagnetic effects
(B less than or equal to 7 T) in electron-irradiated (T = 300 K, E = 6
MeV, Phi less than or equal to 5.7 x 10(17) cm(-2)) n- and p-Pb1-xSnx
Se (x less than or equal to 0.03) alloys in the vicinity of the insula
tor-metal transition induced by pressure (P less than or equal to 18 k
bar). In the frame of the two-band model, the dependence of the Hall c
onstant on the magnetic field was calculated and found to be in a good
agreement with experimental data. The main parameters of charge carri
ers in irradiated alloys were determined. It was shown that in the met
al phase the hole concentration increases under pressure due to the mo
tion of the energy bands at the Brillouin zone L-point and the flow of
electrons from the valence band to the radiation defect band E-t1. By
comparing theoretical and experimental dependences of hole concentrat
ion on pressure the parameters of the irradiation-induced defect band
E-t1 were determined.