ELECTRON-BEAM-INDUCED CURRENT AND SCANNING TUNNELING SPECTROSCOPY CORRELATIVE STUDY OF CDXHG1-XTE AND CDTE CRYSTALS

Citation
Gn. Panin et al., ELECTRON-BEAM-INDUCED CURRENT AND SCANNING TUNNELING SPECTROSCOPY CORRELATIVE STUDY OF CDXHG1-XTE AND CDTE CRYSTALS, Semiconductor science and technology, 13(6), 1998, pp. 576-582
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
6
Year of publication
1998
Pages
576 - 582
Database
ISI
SICI code
0268-1242(1998)13:6<576:ECASTS>2.0.ZU;2-I
Abstract
A combined scanning electron microscope-scanning tunnelling microscope (SEM-STM) system has been used to characterize CdxHg1-xTe and CdTe cr ystals, The electron beam induced current (EBIC) mode of the SEM shows the existence of inhomogeneities in the electronic behaviour of the s amples, mainly related to the presence of subgrain boundaries and prec ipitates. Current imaging tunnelling spectroscopy images and the relat ed normalized differential conductance curves, obtained with the STM, reveal the electronic inhomogeneities at a finer scale. In particular, local variations of the band gap were shown by the conductance curves in regions with strong EBIC contrast. SEM-and STM-based techniques in a combined instrument appear to be complementary characterization tec hniques.