ELECTRICAL-PROPERTIES OF THIN POLYOXIDES GROWN AT A LOW-TEMPERATURE USING MICROWAVE OXYGEN PLASMA

Microwave plasma oxidation of polycrystalline silicon has been carried out to grow thin polyoxide films at a low temperature in O-2 ambient. The electrical properties of grown oxides have been studied using a m etal-oxide-semiconductor structure. The current-voltage characteristic s of polyoxides have been studied for different poly doping and post-o xidation annealing conditions, It is found that the polyoxide on undop ed poly-Si has lower leakage current and higher breakdown voltage, whe reas the oxide on doped poly-Si has higher tunnelling efficiency at lo wer field. The oxide on boron doped poly-Si exhibits electron trapping behaviour.