PHOTOLUMINESCENCE OF AS-GROWN AND HYDROGENATED CARBON-DOPED INDIUM-PHOSPHIDE

The incorporation behaviour of C in InP is investigated by performing photoluminescence (PL) measurements on variously C-doped (similar to 1 0(18) to similar to 6 x 10(19) C at. cm(-3)) InP both before and after a deliberate hydrogenation. The C incorporation is shown to take plac e preferentially on donor sites (C on group-ill In site, C-ln), but al so found to occur unambiguously on the acceptor sites (C on group-V P site, C-p) for all doping levels studied here. High C dopings severely degraded the overall PL efficiency and led to the formation of broad- band deep-level (DL) emissions. The hydrogenation, on the other hand, greatly improved the PL quality and enhanced the C donor activity by p assivating (or neutralizing) the DLs. In light of these new data, we f inally discussed the incorporation behaviour of C in InP.