A VERTICAL HIGH-VOLTAGE TERMINATION STRUCTURE FOR HIGH-RESISTIVITY SILICON DETECTORS

Authors
SEGAL JD KENNEY CJ AW CH PARKER SI VILKELIS G IWANCZYK JS PATT BE PLUMMER J
Citation
Jd. Segal et al., A VERTICAL HIGH-VOLTAGE TERMINATION STRUCTURE FOR HIGH-RESISTIVITY SILICON DETECTORS, IEEE transactions on nuclear science, 45(3), 1998, pp. 364-369
Citations number
11
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
45
Issue
3
Year of publication
1998
Pages
364 - 369
Database
ISI
SICI code
0018-9499(1998)45:3<364:AVHTSF>2.0.ZU;2-V
Abstract
A new high voltage diode termination structure has been developed far the backside junction of silicon detectors which require double-sided processing. The new structure consists of a deep vertical etch through the diode at the edge of the detector. It requires only one mask, and is extremely robust to scratches or other mechanical damage. The vert ical termination has been successfully applied to an integrated pixel detector, where it increased yield. It has also been applied to an 8mm diameter cylindrical drift detector.