EVALUATION OF P-STOP STRUCTURES IN THE N-SIDE OF N-ON-N SILICON STRIPDETECTOR

Authors
UNNO Y KITABAYASHI H DICK B DUBBS T GRILLO A IKEDA M IWATA Y KASHIGIN S KITAYAMA E KROEGER W KOHRIKI T KONDO T MOORHEAD G MORGAN D NAKANO I OHMOTO T OHSUGI T PHILLIPS PW RICHARDSON J ROWE W SADROZINSKI HFW SATO K SIEGRIST J SPENCER E SPIELER H TAKASHIMA R TAYLOR G TERADA S UMEDA T WILDER M WYLLIE K YAGI H
Citation
Y. Unno et al., EVALUATION OF P-STOP STRUCTURES IN THE N-SIDE OF N-ON-N SILICON STRIPDETECTOR, IEEE transactions on nuclear science, 45(3), 1998, pp. 401-405
Citations number
6
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
45
Issue
3
Year of publication
1998
Pages
401 - 405
Database
ISI
SICI code
0018-9499(1998)45:3<401:EOPSIT>2.0.ZU;2-V
Abstract
Large area (63.6 mm x 64 mm) n-on-n silicon strip detectors have been fabricated, implementing various p-stop structures in the n-side. The detectors were characterized in laboratory and in beamtests. The beamt ests showed that the individual p-stop structure collected less charge in the region between the strips than other p-stop structures.