IMAGING PERFORMANCE OF SINGLE-ELEMENT CDZNTE DETECTORS FOR DIGITAL RADIOGRAPHY

We measured the charge collection efficiency and energy resolution at 60 keV and 122 keV for single-element Cd0.8Zn0.2Te semiconductor detec tors 2x10x1O mm(3) irradiated transverse to the electric field, in vie w of their possible use for digital radiography. Charge collection eff iciency, energy resolution and charge collection time have been measur ed as a function of the bias voltage. The detector's imaging performan ce was evaluated, using a scanning procedure, by measurements (at 60 k eV) of the line spread function and edge response function of the imag ing system; metallic test objects and bone tissue were imaged. Image c ontrast values as low as C=10% were obtained for a minimum 5:1 S.N.R..