DEVELOPMENT OF A SILICON-CARBIDE RADIATION DETECTOR

The radiation detection properties of semiconductor detectors made of 4H silicon carbide were evaluated. Both Schottky and p-n junction devi ces were tested. Exposure to alpha particles from a Pu-238 source led to robust signals from the detectors. The resolution of the Schottky S iC detector was 5.8% (FWHM) at an energy of 294 keV, while that of the p-n junction was 6.6% (FWHM) at 260 keV. No effect of temperature in the range of 22 to 89 degrees C was observed on the characteristics of the Pu-238 alpha-induced signal from the SiC detector. In addition, t esting in a gamma field of 10,000 rad-Si h(-1) showed that the alpha-i nduced signal was separable from the gamma signal.