TCAD-BASED ANALYSIS OF RADIATION-HARDNESS IN SILICON DETECTORS

The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics, as well as radiation-induced deep -level recombination centers. Realistic description of multiple-strip devices can be accounted for. To allow for validation of the analysis tool, actual detectors have been measured, before and after being irra diated with neutrons. Simulation predictions agree well with experimen ts. Limitations of the adopted model are discussed, with reference to simulation-based comparison with higher-order models.