PIXEL DETECTOR READOUT ELECTRONICS WITH 2-LEVEL DISCRIMINATOR

Authors
Citation
F. Pengg, PIXEL DETECTOR READOUT ELECTRONICS WITH 2-LEVEL DISCRIMINATOR, IEEE transactions on nuclear science, 45(3), 1998, pp. 745-750
Citations number
7
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
45
Issue
3
Year of publication
1998
Pages
745 - 750
Database
ISI
SICI code
0018-9499(1998)45:3<745:PDREW2>2.0.ZU;2-U
Abstract
In preparation for a silicon pixel detector with more than 3000 readou t channels per chip for operation at the future large hadron collider (LHC) at CERN the analog frontend of the readout electronics has been designed and measured on several test-arrays with 16 by 4 cells. They are implemented in the HP 0.8 mu m process but compatible with the des ign rules of the radiation hard Honeywell 0.8 mu m bulk process. Each call contains bump bonding pad, preamplifier, discriminator and contro l logic for masking and testing within a layout area of only 50 mu m b y 140 mu m. A new two-level discriminator scheme has been implemented to cope with the problems of time-walk and interpixel cross-coupling. The measured gain of the preamplifier is 900mV for a minimum ionizing particle (MIP, about 24000 e(-) for a 300 mu m thick Si-detector) with a return to baseline within 750ns for a 1MIP input signal. The full r eadout chain (without detector) shows an equivalent noise charge of 60 e(-) r.m.s. The time-walk, a function of the separation between the tw o threshold levels, is measured to be 22ns at a separation of 1500e(-) , which is adequate for the 40MHz beam-crossing frequency at the LHC. The interpixel cross-coupling, measured with a 40fF coupling capacitan ce, is less than 3%. A single cell consumes 35 mu W at 3.5V supply vol tage.