THEORETICAL-ANALYSIS OF EDGE PARASITIC TRANSISTOR EFFECTS IN MESA-ISOLATED FULLY-DEPLETED SOI NMOS DEVICES

Authors
WANG HM XI XM ZHANG X WANG YY
Citation
Hm. Wang et al., THEORETICAL-ANALYSIS OF EDGE PARASITIC TRANSISTOR EFFECTS IN MESA-ISOLATED FULLY-DEPLETED SOI NMOS DEVICES, International journal of electronics, 85(1), 1998, pp. 11-19
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
85
Issue
1
Year of publication
1998
Pages
11 - 19
Database
ISI
SICI code
0020-7217(1998)85:1<11:TOEPTE>2.0.ZU;2-H
Abstract
Using a quasi-two-dimensional analysis, we derived an analytical expre ssion for the sidewall surface potential in a mesa-isolated fully-depl eted SOI NMOSFET. The results were compared with two-dimensional numer ical device simulation. A comprehensive investigation of edge parasiti c transistor effects in the mesa-isolated fully-depleted SOI NMOS devi ces was made. It is found that device technological parameters must be carefully optimized to eliminate the edge effects.