P. Masson et al., SURFACE-POTENTIAL DETERMINATION IN IRRADIATED MOS-TRANSISTORS COMBINING CURRENT-VOLTAGE AND CHARGE-PUMPING MEASUREMENTS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1355-1364
A method combining charge pumping and current-voltage measurements is
presented for determining the surface potential versus gate voltage re
lationship in irradiated MOS transistors. This technique uses paramete
r optimization and simple numerical equations. It can be applied even
for a high interface state density and for a non-uniform distribution
in the silicon bandgap. This makes the method attractive for all studi
es concerning interface trap characterization or accurate modeling of
MOS transistors in subthreshold regime. In this study, this new approa
ch is applied to n-channel transistors irradiated up to 10 Mrad (SiO2)
.